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| 24-30 GHz GaAs MMIC Low Noise Amplifier AA028N1-00 Features s Single Bias Supply Operation (4.5 V) s 3.0 dB Typical Noise Figure at 28 GHz 1.250 Chip Outline 1.084 1.605 1.829 2.091 2.245 s 17 dB Typical Small Signal Gain s 0.25 m Ti/Pd/Au Gates s 100% On-Wafer RF, DC and Noise Figure Testing s 100% Visual Inspection to MIL-STD-883 MT 2010 1.162 1.172 0.530 0.087 0.124 0.000 0.000 0.235 1.056 1.957 2.268 2.355 Description Alpha's three-stage reactively-matched 24-30 GHz MMIC low noise amplifier has typical small signal gain of 17 dB with a typical noise figure of 3.0 dB at 28 GHz. The chip uses Alpha's proven 0.25 m low noise PHEMT technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability. The FETs employ surface passivation to ensure a rugged reliable part with through-substrate via holes and gold-based backside metallization to facilitate a conductive epoxy die attach process. Dimensions indicated in mm. All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide. Chip thickness = 0.1 mm. Absolute Maximum Ratings Characteristic Operating Temperature (TC) Storage Temperature (TST) Bias Voltage (VD) Power In (PIN) Junction Temperature (TJ) Value -55C to +90C -65C to +150C 6 VDC 10 dBm 175C Electrical Specifications at 25C (VDS = 4.5 V) Parameter Drain Current Small Signal Gain Noise Figure Input Return Loss Output Return Loss Output Power at 1 dB Gain Compression1 Thermal Resistance2 1. Not measured on a 100% basis. 2. Calculated value based on measurement of discrete FET. 3. Typical represents the median parameter value across the specified frequency range for the median chip. Condition F = 24-30 GHz F = 28 GHz F = 24-30 GHz F = 24-30 GHz F = 28 GHz Symbol IDS G NF RLI RLO P1 dB JC Min. 15 Typ.3 24 17 3.0 -11 -14 7 92 Max. 50 3.5 -6 -10 Unit mA dB dB dB dB dBm C/W Alpha Industries, Inc. [781] 935-5150 * Fax [617] 824-4579 * Email sales@alphaind.com * www.alphaind.com Specifications subject to change without notice. 1/01A 1 24-30 GHz GaAs MMIC Low Noise Amplifier AA028N1-00 Typical Performance Data 20 10 0 S21 S11 S22 -20 -30 S12 -40 -50 20 24 28 32 Bias Arrangement VD2 .01 F 50 pF (dB) -10 RF IN RF OUT VD1 .01 F 50 pF Frequency (GHz) Typical Small Signal Performance S-Parameters (VD = 4.5 V) 10 9 Gain* 2.5 V 5.0 V Gain 2.5 V Gain 4.5 V NF 4.5 V NF 2.5 V NF* 2.5 V 5.0 V 21 20 19 18 17 16 15 14 13 20 22 24 26 28 30 32 For biasing on, adjust VDS from zero to the desired value (4.5 V recommended). For biasing off, reverse the biasing on procedure. Circuit Schematic D Noise Figure (dB) 8 7 6 5 4 3 2 Gain (dB) G Detail A VD2 Frequency (GHz) Typical Gain and Noise Figure Performance for Three Bias Conditions *Special Bias: VD1 = 2.5 V, VD2 = 5.0 V G 43 40 RF IN SEE DETAIL A D G D G D RF OUT VD1 20 28 GHz Gain (dB) and 28 GHz Noise Figure (dB) 18 16 14 12 10 8 6 4 2 1.0 NF 2.0 3.0 4.0 5.0 6.0 ID Gain Drain Current (mA) 37 34 31 28 25 22 19 16 VD1 and VD2 (V) Typical Gain and Noise Figure Performance vs. Drain Bias (VD1 = VD2) 2 Alpha Industries, Inc. [781] 935-5150 * Fax [617] 824-4579 * Email sales@alphaind.com * www.alphaind.com Specifications subject to change without notice. 1/01A |
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